High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Applications

• Package type: leaded
• Package form: T-1, clear epoxy
• Dimensions: Ø 3 mm
• High speed
• High radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity: ϕ = ± 22°
• Peak wavelength: λp = 940 nm
• Good spectral matching to Si photodetectors