MALVERN, Pa. — May 21, 2025 — To provide higher efficiency for industrial applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 80 V TrenchFET® Gen IV n-channel power MOSFET in the PowerPAK® 8x8SW bond wireless (BWL) package with best in class on-resistance. Compared to competing devices in the same footprint, the Vishay Siliconix SiEH4800EW offers 15 % lower on-resistance, while reducing RthJC by 18 %.

Malvern, Pennsylvania (USA) – 21. Mai 2025 – Um höhere Effizienzen und Leistungsdichten für industrielle Anwendungen zu erzielen, hat Vishay Intertechnology, Inc. (NYSE: VSH) heute einen neuen 80V-TrenchFET® Gen IV n-Kanal-Leistungs-MOSFET im PowerPAK® 8x8SW Bond Wireless (BWL)-Gehäuse mit branchenführendem On-Widerstand vorgestellt. Im Vergleich zu Konkurrenzprodukten mit gleicher Grundfläche bietet der SiEH4800EW von Vishay Siliconix einen um 15 % geringeren On-Widerstand und gleichzeitig einen um 18 % reduzierten RthJC-Wert.

MALVERN, Pa. — March 26, 2025 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new Gen 4.5 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHK050N65E slashes on-resistance by 48.2 %, while offering a 65.4 % lower resistance times gate charge, a key figure of merit (FOM) for 650 V MOSFETs used in power conversion applications.

MALVERN, Pa. — Dec. 4, 2024 — To provide higher efficiency and power density for industrial applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 40 V TrenchFET® Gen V n-channel power MOSFET in the PowerPAK® 10x12 package with best in class on-resistance. Compared to competing devices in the same footprint, the Vishay Siliconix SiJK140E slashes on-resistance by 32 %, while offering 58 % lower on-resistance than 40 V MOSFETs in the TO-263-7L.