High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

Applications

• Package type: surface-mount
• Double stack technology
• Package form: power QFN
• Dimensions (L x W x H in mm): 3.85 x 3.85 x 1.51
• Peak wavelength: λp = 850 nm
• Zener diode for ESD protection up to 2 kV
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 75°
• Designed for high drive currents: up to 1 A (DC) and up to 5 A pulses
• Low thermal resistance: RthJP = 9 K/W
• Floor life: 168 h, MSL 3, according to J-STD-020
• Lead (Pb)-free reflow soldering