MALVERN, Pa. — Jan. 29, 2025 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency applications, the Vishay Semiconductors devices offer the best trade-off between capacitive charge (Q_C) and forward voltage drop for diodes in their class.

The devices released today consist of 40 A to 240 A dual-diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer technology, the diodes’ low forward voltage drop down to 1.36 V dramatically reduces conduction losses for increased efficiency. Further increasing efficiency, the devices offer better reverse recovery parameters than Si-based diodes and have virtually no recovery tail.

Typical applications for the components will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. In these applications, the diodes’ low Q_C down to 56 nC allows for high speed switching, while their industry-standard package offers a drop-in replacement for competing solutions.

The diodes deliver high temperature operation to +175 °C and a positive temperature coefficient for easy parallelling. UL-approved to file E78996, the devices feature a large creepage distance between terminals and a simplified mechanical design for rapid assembly.

Device Specification Table:

¹V_R = 400 V

²V_R = 800 V

Samples and production quantities of the new SiC diodes are available now, with lead times of 18 weeks.