High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology image

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology

Product Details

Features

Driver and occupant monitoring
Eye tracking
Safety and security, CCTV

Applications

Package type: surface-mount
Package form: high power SMD with lens
Dimensions (L x W x H in mm): 3.4 x 3.4 x 2.45
Peak wavelength: λp = 850 nm
AEC-Q102 qualified
Angle of half intensity: ϕ = ± 40°
Designed for high drive currents: up to 1.5 A (DC) and up to 5 A (pulsed)
Low thermal resistance: 5 K/W < RthJSP < 9 K/W
ESD: up to 5 kV (according to ANSI / ESDA / JEDEC® JS-001)
Floor life: 168 h, MSL 3, according to J-STD-020E
Lead (Pb)-free reflow soldering

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Resources

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AEC-Q102-qualifizierte IR-Sender von Vishay Intertechnology liefern 10 % höhere Strahlungsintensität bei 20 % kleinerer Grundfläche

AEC-Q102-qualifizierte IR-Sender von Vishay Intertechnology liefern 10 % höhere Strahlungsintensität bei 20 % kleinerer Grundfläche

Press Release|2024-05-21

Malvern, Pennsylvania (USA) – 22. Mai 2024 – Vishay Intertechnology, Inc. (NYSE: hat heute sein Optoelektronik-Portfolio um acht neue AEC-Q102-qualifizierte 850-nm- und 940-mm Hochleistung-Infrarot (IR)-Sender erweitert, die in 3,4-mm-mal-3,4-mm-Gehäusen für die Oberflächenmontage die beste Strahlungsintensität ihrer Klasse liefern. Die auf der Astral-Oberflächenemitter-Chiptechnologie von Vishay Semiconductors basierenden Bauelemente sind für hohe Treiberströme von bis zu 1,5 A DC und 5 A gepulst in Automobilanwendungen ausgelegt.

Vishay Intertechnology AEC-Q102 Qualified IR Emitters Deliver 10 % Higher Radiant Intensity in 20 % Smaller Footprint

Vishay Intertechnology AEC-Q102 Qualified IR Emitters Deliver 10 % Higher Radiant Intensity in 20 % Smaller Footprint

Press Release|2024-05-21

MALVERN, Pa. — May 22, 2024 — Vishay Intertechnology, Inc. (NYSE: VSH) today broadened its optoelectronics portfolio with the release of eight new AEC-Q102 qualified 850 nm and 940 nm high power infrared (IR) emitters that deliver best in class radiant intensity in 3.4 mm by 3.4 mm surface-mount packages. Built on Vishay’s Astral surface emitter chip technology, the Vishay Semiconductors devices are designed for high drive currents up to 1.5 A DC and 5 A pulsed in automotive applications.