1200 V Power SiC Merged PIN Schottky Diode, 5 A image

1200 V Power SiC Merged PIN Schottky Diode, 5 A

1200 V Power SiC Merged PIN Schottky Diode, 5 A

Product Details

Applications

Majority carrier diode using Schottky technology on SiC wide band gap material
Improved VF and efficiency by thin wafer technology
Positive VF temperature coefficient for easy paralleling
Virtually no recovery tail and no switching losses
Temperature invariant switching behavior
175 °C maximum operating junction temperature
MPS structure for high ruggedness to forward current surge events
Meets JESD 201 class 1A whisker test
Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106

Tools

Showing

0-0

of 0


No design tools found.

Showing

0-0

of 0

Infographics

Infographics

Find visual presentations highlighting applications, features, and benefits of designing with our products.  

650 V Silicon Carbide (SiC) Schottky Diodes

650 V Silicon Carbide (SiC) Schottky Diodes

View Infographic

Resources

View All Resources

Neue 650-V-SiC-Schottky-Dioden der Generation 3 von Vishay Intertechnology verbessern Wirkungsgrad und Zuverlässigkeit von Schaltnetzteilen

Neue 650-V-SiC-Schottky-Dioden der Generation 3 von Vishay Intertechnology verbessern Wirkungsgrad und Zuverlässigkeit von Schaltnetzteilen

Press Release|2024-06-25

Malvern, Pennsylvania (USA) – 26. Juni 2024 – Vishay Intertechnology, Inc. (NYSE: VSH hat heute 16 neue 1200-V-Siliziumkarbid (SiC)-Schottky-Dioden der Generation 3 vorgestellt. Die neuen Bauelemente von Vishay Semiconductors zeichnen sich durch ein Merged-PIN-Schottky (MPS)-Design aus und kombinieren hohe Stoßstromfestigkeit mit niedriger Vorwärtsspannung, kapazitiver Ladung und niedrigem Sperrstrom, um die Effizienz und Zuverlässigkeit in Schaltnetzteil-Designs zu erhöhen.

New Vishay Intertechnology Gen 3 1200 V SiC Schottky Diodes Increase Efficiency and Reliability for Switching Power Designs

New Vishay Intertechnology Gen 3 1200 V SiC Schottky Diodes Increase Efficiency and Reliability for Switching Power Designs

Press Release|2024-06-25

MALVERN, Pa. — June 26, 2024 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new Gen 3 1200 V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs.