1200 V Gen 3 Power SiC Merged PIN Schottky Diode, 5 A

Applications

• Minimum creepage and clearance distances are 5.2 mm and 5.4 mm respectively
• Majority carrier diode using Schottky technology on SiC wide band gap material
• Molding Compound Comparative Tracking Index: CTI ≥ 600, provides excellent electrical insulation at relevant working voltages
• Improved VF and efficiency by thin wafer technology
• Positive VF temperature coefficient for easy paralleling
• Virtually no recovery tail and no switching losses
• Temperature invariant switching behavior
• 175 °C maximum operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• MPS structure for high ruggedness to forward current surge events
• Meets JESD 201 class 1A whisker test