1200 V Gen 3 Power SiC Merged PIN Schottky Diode, 10 A

Product Details

Minimum creepage and clearance distances are 5.2 mm and 5.4 mm respectively
Majority carrier diode using Schottky technology on SiC wide band gap material
Molding Compound Comparative Tracking Index: CTI ≥ 600, provides excellent electrical insulation at relevant working voltages
Improved VF and efficiency by thin wafer technology
Positive VF temperature coefficient for easy paralleling
Virtually no recovery tail and no switching losses
Temperature invariant switching behavior
175 °C maximum operating junction temperature
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
MPS structure for high ruggedness to forward current surge events
Meets JESD 201 class 1A whisker test