1200 V Power SiC Gen 3 Merged PIN Schottky Diode, 2 x 5 A

Applications

• Majority carrier diode using Schottky technology on SiC wide band gap material
• Improved VF and efficiency by thin wafer technology
• Positive VF temperature coefficient, for easy paralleling
• Virtually no recovery tail and no switching losses
• Temperature invariant switching behavior
• 175 °C maximum operating junction temperature
• MPS structure for high ruggedness to forward current surge events
• Meets JESD 201 class 1A whisker test
• Solder bath temperature 275 °C maximum, 10 s per JESD 22-B106