eFuse PowerStage with Pre-Charge Bidirectional, 1200 V, 20 mΩ SiC MOSFET

This eFuse PowerStage evaluation board is equipped with 1200 V, 20 mΩ total SiC MOSFETs to break bidirectional currents, as well as a pre-charge switch and resistor. The power circuit provides all the necessary feedback signals, including current and voltage. These signals are provided via a standard connector, allowing the user to attach a custom control board. The current handling capability of this power stage depends heavily on acceptable losses and thermal management. The design intention is to provide a possible solution for automotive eFuses that protect auxiliary components and handle currents of up to 40 A.

Reference Design Files

EFUSE-800V40ABI

ZIP | Jun 9, 2025

Reference Board

EFUSE-800V40ABI

Datasheet

EFUSE-800V40ABI

PDF | May 16, 2025

Reference

Functional Block Diagram

Features

Low TCR shunt for precise current measurement
Low tracking error voltage divider

Robust I/O port with ESD protection and freewheel capabilities
Robust SiC switches with a 3 µs short circuit withstand time

Products

Resistor: CMA 0204, CMB 0207

High Pulse Load Carbon Film MELF Resistors

Datasheet Buy Now Samples

MOSFET: MXP120A045FE

MaxSiC® 1200 V N-Channel SiC MOSFET

Datasheet Buy Now Samples

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