SOT-227 Silicon Carbide Schottky Barrier Diode, 650 V, 200 A image

SOT-227 Silicon Carbide Schottky Barrier Diode, 650 V, 200 A

SOT-227 Silicon Carbide Schottky Barrier Diode, 650 V, 200 A

Product Details

Features

Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness.
Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior.
Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters

Applications

Virtually no recovery tail and no switching losses
Majority carrier diode using Schottky technology on SiC wide band gap material
Improved VF and efficiency by thin wafer technology
High speed switching, low switching losses
Positive temperature coefficient, for easy paralleling
Electrically isolated base plate
Large creepage distance between terminal
Simplified mechanical designs, rapid assembly
Designed and qualified for industrial level
UL approved file E78996

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650-V- und 1200-V-SiC-Schottky-Dioden von Vishay Intertechnology im SOT-227-Gehäuse verbessern den Wirkungsgrad bei Hochfrequenzanwendungen

650-V- und 1200-V-SiC-Schottky-Dioden von Vishay Intertechnology im SOT-227-Gehäuse verbessern den Wirkungsgrad bei Hochfrequenzanwendungen

Press Release|2025-01-29

Malvern, Pennsylvania (USA) – 29. Januar 2025 – Vishay Intertechnology, Inc. (NYSE: VSH) hat heute 16 neue 650-V- und 1200-V- Siliziumkarbid (SiC) Schottky-Dioden im Standardgehäuse SOT-227 vorgestellt. Die für hohe Geschwindigkeit und Effizienz bei Hochfrequenzanwendungen konzipierten Bauelemente von Vishay Semiconductors bieten den besten Kompromiss zwischen kapazitiver Ladung (QC) und Vorwärtsspannungsabfall bei Dioden ihrer Klasse.

Vishay Intertechnology 650 V and 1200 V SiC Schottky Diodes in SOT-227 Package Increase Efficiency in High Frequency Applications

Vishay Intertechnology 650 V and 1200 V SiC Schottky Diodes in SOT-227 Package Increase Efficiency in High Frequency Applications

Press Release|2025-01-29

MALVERN, Pa. — Jan. 29, 2025 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency applications, the Vishay Semiconductors devices offer the best trade-off between capacitive charge (QC) and forward voltage drop for diodes in their class.